Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon

Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,W.P. Beyermann,Sandeep Kumar

DOI: https://doi.org/10.1103/PhysRevB.109.L081113

2024-02-26

Abstract:The magnetoelectronic coupling can be defined as cross-domain coupling between electronic and magnetic properties, where modulation in magnetic properties changes the electronic properties. In this letter, an explicit experimental evidence of magnetoelectronic coupling is presented, which is uncovered from oscillatory Hall effect response in Hall measurement. The strain gradient in a MgO (1.8 nm)/p-Si (~400 nm) freestanding sample leads to transfer of electrons (~5X10^18 cm^-3) from valence to conduction band due to flexoelectronic charge separation in the p-Si layer. The resulting flexoelectronic polarization gives rise to temporal magnetic moment from dynamical multiferroicity. The external magnetic field changes the net temporal magnetic moment, which causes modulations in charge carrier concentration and oscillatory Hall effect. The period of oscillatory Hall response is 1.12 T, which is attributed to the magnitude of temporal magnetic moment. The discovery of oscillatory Hall effect adds a new member to the family of Hall effects.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to reveal and verify the existence of magnetoelectronic coupling in silicon materials and explore the new physical phenomenon it causes - the oscillatory Hall effect. Specifically, the author experimentally shows that in the MgO/p - Si heterostructure with a strain gradient, due to flexoelectronic polarization and dynamical multiferroicity, an external magnetic field can modulate the temporal magnetic moment, thereby changing the carrier concentration and inducing the oscillatory Hall effect.

### Main problem summary:

1. **Reveal the magnetoelectronic coupling mechanism**:
- Researchers hope to prove that in silicon materials, there is a cross - domain coupling between magnetic and electrical properties, namely magnetoelectronic coupling. This coupling is manifested as an external magnetic field can change the electrical properties of the material (such as carrier concentration).

2. **Discover a new type of Hall effect**:
- In addition to the classical Hall effect, researchers hope to experimentally observe a new Hall effect - the oscillatory Hall effect. The periodic change of this effect is related to the magnitude of the temporal magnetic moment, providing a new perspective for understanding magnetoelectronic coupling.

### Specific research content:

- **Experimental design**: A layer of magnesium oxide (MgO) is deposited on p - type silicon (p - Si) to form an MgO/p - Si heterostructure. After applying a strain gradient, the flexoelectronic polarization phenomenon is observed.

- **Theoretical explanation**: According to the equation
\[
\mathbf{M}\propto\mathbf{n}'\times\nabla\mathbf{P}
\]
where \(\mathbf{M}\) is the temporal magnetic moment, \(\mathbf{n}'\) is the carrier concentration gradient, and \(\mathbf{P}\) is the polarization intensity. This equation describes the essence of magnetoelectronic coupling, that is, the external magnetic field affects the carrier concentration by changing the temporal magnetic moment.

- **Experimental results**: The Hall responses of two samples (a control sample and an experimental sample) were measured at 350 K and 200 K. The experimental sample shows an obvious oscillatory Hall effect, while the control sample does not have this effect. The oscillation period is approximately 1.12 T, which corresponds to the magnitude of the temporal magnetic moment.

### Conclusion:

Through experiments, the researchers successfully demonstrated the existence of magnetoelectronic coupling and discovered the oscillatory Hall effect for the first time. This discovery not only provides new insights into understanding the magnetoelectronic coupling mechanism in silicon materials but also lays the foundation for the development of new magnetoelectronic materials and technologies.