Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Mustafa Coskun,Abdulmecit Turut,Kadir Ejderha

DOI: https://doi.org/10.1007/s10854-023-11251-7

2023-09-24

Journal of Materials Science Materials in Electronics

Abstract:Ni/ n -GaP/Al Schottky diodes have been fabricated and their dielectric characteristics have been measured in under vacuum ambient. Parameters such as dielectric constant ɛ′ , dielectric loss ɛ′′ , real Z′ and imaginary Z′′ impedance, real M′ and imaginary M′′ electrical modulus, and conductivity σ as a function of frequency f have been measured in the temperature range of 100–320 K with steps of 20 K. The Nyquist plots of ( Z′ – Z′′ ) have shown that non-Debye relaxation phenomena take place in the sample. The conductivity σ measurements at each temperature have shown that both ac and dc conductivities are present in the operating frequency range. The activation energy ( E a ) has been calculated using an Arrhenius equation from the peak frequency of both Z′′ – f and M′′ – f plots at each temperature. The obtained activation energies values have been obtained as 18 meV and 4.37 meV from the Z′′ – f plot and 16.33 meV and 4.37 meV from the M′′ – f plot for the high and low-temperature regions, respectively. The activation energies are originated from shallow interface states located near and relatively far from the bottom of the conduction band.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied