Abstract:This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current-voltage, capacitance-voltage characteristics, and impedance spectroscopy in a temperature interval 220-350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current-voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance-voltage measurements. Analysis of the J-V-T and C-V-T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher's universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode

Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diode

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

DC current-voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Temperature Coefficients Of Grain Boundary Resistance Variations In A Zno/P-Si Heterojunction

The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3

Capacitance and conductance of Zn/sub x/Cd/sub 1-x/S/ZnTe heterojunctions

Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

Determining Band Offset and Interface Charge Density of Hydrogenated Nanocrystalline Silicon/crystalline Silicon Heterojunction Diode by C-V Matching Method

Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes

ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties