Abstract:We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside the simplest configurations with atomic interdiffusion we consider also some configurations characterized by As depletion and cation vacancies, motivated by the recent successfull growth of ZnSe/GaAs pseudomorphic structures with minimum stacking fault density characterized by the presence of a defected (Zn,Ga)Se alloy in the interface region. We find that--under particular thermodynamic conditions--some defected configurations are favoured with respect to undefected ones with simple anion or cation mixing, and that the calculated band offsets for some defected structures are compatible with those measured. Although it is not possible to extract indications about the precise interface composition and vacancy concentration, our results support the experimental indication of (Zn,Ga)Se defected compounds in high-quality ZnSe/GaAs(001) heterojunctions with low native stacking fault density. The range of measured band offset suggests that different atoms at interfaces rearrange, with possible presence of vacancies, in such a way that not only local charges but also ionic dipoles are vanishing.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is about the formation mechanism of the ZnSe/GaAs(001) heterojunction interface defect structure and its influence on the structure, thermodynamics, and electronic properties. Specifically, the author is concerned with whether the (Zn,Ga)Se alloy phase containing cation vacancies and arsenic - depleted regions is more favorable than a simple cation or anion - mixed interface under specific thermodynamic conditions. In addition, the study also explores whether the band - gap offsets of these defect structures are consistent with the experimental measurement results. ### Summary of main problems: 1. **Stability of interface defect structures**: Under specific thermodynamic conditions, which defect structures (such as cation vacancies, arsenic depletion) are more stable? 2. **Calculation of band - gap offsets**: Does the calculated band - gap offset match the experimental measurement? 3. **Understanding of microscopic mechanisms**: Explain the microscopic mechanisms of the formation of these defect structures, especially the phenomenon of low intrinsic stacking - fault density observed in high - quality ZnSe/GaAs(001) heterojunctions. ### Specific research contents: - **Theoretical and computational methods**: Use the first - principles pseudopotential method based on density - functional theory, considering the interface structure under charge - neutral conditions. - **Interface morphology selection**: Several different interface morphologies are studied, including simple cation and anion - mixed interfaces and interfaces containing cation vacancies. - **Thermodynamic stability analysis**: Evaluate the relative stability of different interface morphologies by calculating the interface formation energy. - **Electronic property analysis**: Study the influence of defect structures on the density of electronic states (DOS) and band - gap alignment. ### Key findings: - Under specific thermodynamic conditions, some interface structures with defects are more favorable than simple cation or anion - mixed interfaces. - The calculated band - gap offset is consistent with the experimental measurement results, supporting the existence of (Zn,Ga)Se defect compounds observed experimentally. - The formation of defect structures may involve atomic rearrangement and the presence of vacancies, so that not only the local charge but also the ionic dipole moment tends to disappear. Through these studies, the author hopes to provide a theoretical basis for understanding the interface characteristics of high - quality ZnSe/GaAs(001) heterojunctions and provide guidance for further optimizing the growth conditions of such materials.

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