Abstract:PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of IV-VI/III-V heterostructures. The synthesis of such heterostructures and understanding mechanisms for strain-relief is central to achieving this goal. We show that a range of interfacial defects mediate lattice mismatch in (001)-oriented epitaxial thin films of PbSe with III-V templates of GaAs, InAs, and GaSb. While the primary slip system {100}<110> for dislocation glide in PbSe is well-studied for its facile glide properties, it is inactive in (001)-oriented films used in our work. Yet, we obtain nearly relaxed PbSe films in the three heteroepitaxial systems studied with interfaces ranging from incoherent without localized misfit dislocations on 8.3% mismatched GaAs, a mixture of semi-coherent and incoherent patches on 1.5% mismatched InAs, to nearly coherent on 0.8% mismatched GaSb. The semi-coherent portions of the interfaces to InAs form by 60° misfit dislocations gliding on higher order {111}<110> slip systems. On the more closely lattice-matched GaSb, arrays of 90° (edge) misfit dislocations form via a climb process. The diversity of strain-relaxation mechanisms accessible to PbSe makes it a rich system for heteroepitaxial integration with III-V substrates.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: when epitaxially growing PbSe thin films on (001) -oriented III - V substrates (such as GaAs, InAs and GaSb), how to relieve the strain caused by lattice mismatch through different interface defect mechanisms. Specifically, the research focuses on understanding the strain relaxation mechanisms of PbSe thin films under different degrees of lattice mismatch, and how these mechanisms affect the quality and performance of the thin films. ### Main Problem Analysis 1. **Lattice Mismatch and Strain Relaxation**: - The lattice constants between PbSe and III - V substrates do not match, which will lead to large strain. For example, PbSe on GaAs has a compressive mismatch of 8.3%, while the mismatch on InAs is 1.5% and on GaSb is only 0.8%. - The traditional slip system {100}<110> cannot effectively relieve the strain in (001) -oriented PbSe thin films, so other strain relaxation mechanisms need to be explored. 2. **The Role of Interface Defects**: - The paper shows how various interface defects (such as dislocations, stacking faults, etc.) mediate strain relaxation under different degrees of mismatch. For example: - On GaAs, the PbSe/III - V interface forms a core without local misfit dislocations, but realizes strain relaxation through atomic - layer fluctuations. - On InAs, in addition to the common 60° misfit dislocations, a special disordered interface structure has also been observed, and this structure can also effectively relieve the strain in the case of low mismatch. - On GaSb, a 90° edge - type misfit dislocation array is formed, and these dislocations are formed through the climbing process. 3. **Material Integration and Application Potential**: - Research shows that the diversity of strain relaxation mechanisms of PbSe on different III - V substrates makes it an ideal material for heteroepitaxial integration. This not only helps to achieve high - quality PbSe thin films, but may also regulate electronic properties through strain, providing a new way for the design of new devices. ### Summary By studying in detail the epitaxial growth behavior of PbSe on different III - V substrates, the paper reveals multiple strain relaxation mechanisms and shows the potential of PbSe as a multifunctional material in heteroepitaxial integration. This research is of great significance for the development of high - performance optoelectronic devices based on IV - VI/III - V heterostructures.

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates

Electric fields and valence band offsets at strained [111] heterojunctions

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Effect of Strain on the Lattice Vibrational Properties of PbSe

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films

Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Progress of Iv-Vi Semiconductor Research in China

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties

Exploring tunable optoelectronic properties of two-dimensional GaS/PtSSe heterostructures under biaxial strain and external electric field

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

Single-crystalline PbTe film growth through reorientation

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B