Abstract:We present analytical models and experimental results to describe low-defect density growth (∼ 6 × 10 5 /cm 2 ) of highly mismatched antimonides on Si and GaAs substrates, with strain relief achieved at the growth interface through periodic, 90° interfacial misfit dislocations (IMF). We use molecular mechanics (MM) based modeling techniques to understand, at the atomic level, the spontaneous formation and energetics of these IMF. We have modeled, grown and characterized two systems extensively, these are - AlSb on Si with ∼ 13mismatch and GaSb on GaAs with 7.83lattice mismatch. Growth of these materials by molecular beam epitaxy (MBE) and subsequent High-Resolution Transmission Electron Microscopy (HR-TEM) has indicated that there is no tetragonal distortion in these two systems despite the high lattice mismatch. Instead, the mismatched epi-layers spontaneously form periodic IMF arrays that run along both [110] and [1-10] directions and relieve almost 100of the strain in a few monolayers of deposition. To model this form of strain relief, we use existing theories of strain relief adapted for very high strain conditions and we also use bond energetics to model the strain-relieving interface. The IMFs in these systems are periodic and so is the deviation in bond lengths and bond angles, which restricts our calculation space to a finite number of elements. We shall also demonstrate extensive growth and characterization results of the materials grown with a particular emphasis on the strain-relieving interface to show excellent agreement of the experimental data with the proposed models. The high quality and low-defect density in AlSb grown on Si, has helped us demonstrate optically pumped IR VCSELs and edge emitters monolithically on Si (001) and this data will also be presented.

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates

Electric fields and valence band offsets at strained [111] heterojunctions

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Effect of Strain on the Lattice Vibrational Properties of PbSe

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs

Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films

Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Progress of Iv-Vi Semiconductor Research in China

Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates

Exploring tunable optoelectronic properties of two-dimensional GaS/PtSSe heterostructures under biaxial strain and external electric field

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

Single-crystalline PbTe film growth through reorientation

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics