Abstract:Gallium oxide (Ga 2 O 3 ), with its ultra-wide bandgap and high breakdown voltage, has emerged as a leading candidate for next-generation power devices. The performance and the Baliga figure-of-merit for power devices critically depend on breakdown voltage sustained by Schottky contact of metal with ultra-wide gap materials. However, high-quality Schottky contacts with Ga 2 O 3 presents a significant challenge due to the presence of surface defects and formation of metal induced mid-gap defects states in Ga 2 O 3 . In this study, we investigate the electrical properties and defects at the interface between Ni metal and β -Ga2O3 thin films. Additionally, a 20 nm MgO thin films with various oxygen contents were deposited on β-Ga 2 O 3 using radio-frequency magnetron sputtering and Ni/MgO/ β -Ga 2 O 3 metal-insulator-semiconductor Schottky diodes were fabricated. The frequency dependent C-V characteristic and surface-sensitive XPS depth profile is employed to study the interface of Ni/Ga 2 O 3 and Ni/MgO/Ga 2 O 3 Schottky barrier diodes. Our results show that the Ni/MgO/Ga2O3 Schottky barrier diode with 66% O2 in the MgO thin film during synthesis attains a barrier height of 0.87 eV. Subsequent post-metallization annealing at 300oC in an Ar ambient for 30 minutes enhances the barrier height up to 1.1 eV. Also, a reduced on-resistance of 11.65 mΩ·cm 2 and a lower on-voltage of 0.3V was obtained after annealing in Ar. The frequency dependent C-V characteristic results show no dispersion in capacitance for the annealed sample which signify the passivation of interface defects density (Δ ιτ ) and oxide charges density (N f ) in the dielectric layer (MgO). The minimum value of D it and N f achieved for the sample having highest barrier height (1.1eV) are 5.41× 10 11 /eV/cm 2 and 2.91×10 10 /cm 3 , respectively. This study establishes a vigorous foundation for the expanded utilization of Ga 2 O 3 in power electronics devices, emphasizing the vital role of interface engineering.

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