Abstract:The Pt/beta-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented beta-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/beta-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 10(10), ideality factor (n) of 1.1, Schottky barrier height (Phi(B)) of 1.39 eV, threshold voltage (V-bi) of 1.07 V, ON-resistance (R-ON) of 12.5 m Omega.cm(2), forward current density at 2V (J(@2V)) of 56 A/cm(2), and saturation current density (J(0)) of 2 x 10(-16) A/cm(2). The effective donor concentration N-d - N-a was calculated to be about 2.3 x 10(14) cm(3). Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 degrees C. With increasing temperature, parameters such as R-ON and J(@2V) become better, proving that the diode can work well at high temperature. The EFG grown beta-Ga2O3 single crystal is a promising material to be used in the power devices. (C) 2017 Author(s).

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal N-Znga₂o₄ (111) Substrates

Schottky Barrier Rectifier Based on (100) Ga2O3and its DC and AC Characteristics

Temperature-dependent Electrical Characteristics of Β–ga2o3 Trench Schottky Barrier Diodes Via Self-Reactive Etching

Study of optical float-zone grown gallium oxide schottky barrier diode

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Β-Ga2o3 Epitaxial Growth on Fe-GaN Template by Non-Vacuum Mist CVD and Its Application in Schottky Barrier Diodes

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Schottky Barrier Diode Based On Beta-Ga2o3 (100) Single Crystal Substrate And Its Temperature-Dependent Electrical Characteristics

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

A Review of gallium oxide-based Power Schottky barrier diodes

Achieving High Performance Ga2O3 Diodes by Adjusting Chemical Composition of Tin Oxide Schottky Electrode