$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Sushovan Dhara,Nidhin Kurian Kalarickal,Ashok Dheenan,Sheikh Ifatur Rahman,Chandan Joishi,Siddharth Rajan

DOI: https://doi.org/10.1063/5.0151808

2023-03-09

Abstract:$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $\beta$-Ga$_2$O$_3$ vertical power devices.

Applied Physics,Materials Science

What problem does this paper attempt to address?

The paper attempts to address the issue of fabricating high-performance Trench Schottky Barrier Diodes (TSBD) on β-Ga₂O₃ material. Specifically, the researchers aim to achieve this goal through a novel low-damage gallium atomic beam etching technique. The main problems the paper seeks to solve are as follows:

1. **Reducing damage during the etching process**: Traditional ICP/RIE etching methods cause subsurface damage in β-Ga₂O₃ material, which affects device performance. Therefore, the paper proposes a low-damage gallium atomic beam etching technique.

2. **Increasing reverse breakdown field strength**: β-Ga₂O₃ material has a high theoretical breakdown field strength (8 MV/cm), but traditional Schottky diodes cannot withstand high electric fields under reverse bias, leading to premature breakdown voltage. The paper addresses this issue by introducing a three-dimensional trench structure that pushes the peak electric field at the metal-semiconductor interface into the semiconductor.

3. **Optimizing forward conduction characteristics**: By using the low-damage gallium atomic beam etching technique, researchers can achieve near-ideal forward conduction characteristics, which helps improve the overall performance of the device.

4. **Enhancing overall performance**: The paper demonstrates that using the novel low-damage etching technique and high-quality Al₂O₃ insulating layer can significantly improve the performance metrics of β-Ga₂O₃ vertical power devices, including higher breakdown voltage, lower on-resistance, and higher power switching performance.

Through these improvements, the paper showcases the great potential of β-Ga₂O₃ Trench Schottky Barrier Diodes in high-voltage electronic applications.