Abstract:The performance of the AlGaN/GaN heterostructure based devices depends largely upon electrical behavior of Schottky contact which controls the current flowing through the channel. In this work, electrical behavior of Copper (Cu) Schottky diodes on Al0.25Ga0.75N/GaN heterostructures grown on Silicon have been investigated using temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) techniques. An ideality factor (η) of 1.3 at room temperature (RT) signified that the forward current is dominated by thermionic emission process for current flow in the Schottky diode. The strong polarization field effects with in the barrier layer of the strained AlGaN/GaN heterostructure were considered for evaluating the barrier height using C-V measurements. The barrier height from such analysis was found to be 1.66 eV at RT which is significantly higher than theoretically predicted barrier height for Cu/AlGaN/GaN Schottky diodes. This observation of high barrier height is attributed to the presence of an ultra-thin Cu2O layer between Cu and AlGaN layer as revealed from scanning transmission electron microscopy. The temperature dependence of the barrier height suggests inhomogeneous nature of the Cu/AlGaN/GaN interface with different level of barrier inhomogeneities in different temperature ranges. Further, frequency-dependent C-V measurements were used to electrically characterize surface traps at Cu/AlGaN/GaN interface. Present study highlights the potential of Cu as a Schottky contact on AlGaN/GaN heterostructures for achieving high barrier height which is of utmost importance in GaN based device technology.

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Fabrication and investigation of AlGaN-based Schottky barrier diode

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

High-current, high-voltage AlN Schottky Barrier Diodes

Vertical Gan Schottky Barrier Diodes with Ohmic Contact on N-Polar by the Atomic Layer Deposition of Aluminum Oxide Interfacial Layer

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Large-area vertical-geometry Pt/(010) β-Ga2O3 Schottky barrier diodes and their temperature-dependent electrical properties

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

High-Voltage and High- $i_{\text {on}}/i_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode with Nitridation-Based Termination