Abstract:AlGaN/GaN High Election Mobility Transistor (HEMT), due to its excellent electrical performance and strong radiation resistance, has important application prospects in satellite communications, radar, nuclear reactors and other extreme environments. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT devices. In this paper, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the 2DEG concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this paper, AlGaN/GaN high electron mobility transistors irradiated by 181 Ta 32+ with fluence of 1×10 8 ions/cm 2 、1×10 9 ions/cm 2 and 1×10 10 ions/cm 2 are used to measure the electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10 10 ions/cm 2 , the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation were analyzed by EMMI test, and it was found that the number of "hot spots" increased significantly after the injection of heavy ion radiation of 1×10 10 ions/cm 2 , indicating that radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reached 1×10 10 ions/cm 2 , the defect density increased to 3.19×10 18 cm -3 eV -1 , and the Hooge parameter increased after heavy ion radiation. We believe that radiation leads to increased defect density and parasitic series resistance of AlGaN/GaN HEMT devices, resulting in larger Hooge parameters. Through the function of the normalized power spectral density of the drain current noise and the bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors