Abstract:AlGaN/GaN High Election Mobility Transistor (HEMT), due to its excellent electrical performance and strong radiation resistance, has important application prospects in satellite communications, radar, nuclear reactors and other extreme environments. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT devices. In this paper, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the 2DEG concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this paper, AlGaN/GaN high electron mobility transistors irradiated by 181 Ta 32+ with fluence of 1×10 8 ions/cm 2 、1×10 9 ions/cm 2 and 1×10 10 ions/cm 2 are used to measure the electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10 10 ions/cm 2 , the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation were analyzed by EMMI test, and it was found that the number of "hot spots" increased significantly after the injection of heavy ion radiation of 1×10 10 ions/cm 2 , indicating that radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reached 1×10 10 ions/cm 2 , the defect density increased to 3.19×10 18 cm -3 eV -1 , and the Hooge parameter increased after heavy ion radiation. We believe that radiation leads to increased defect density and parasitic series resistance of AlGaN/GaN HEMT devices, resulting in larger Hooge parameters. Through the function of the normalized power spectral density of the drain current noise and the bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Main Mechanism Responsible for pGaN Gate Breakdown and Lifetime Projection in GaN HEMTs

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

Total-Ionizing-Dose Radiation Induced Gate Damage in High Voltage P-GaN Gate HEMTs

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs