Abstract:Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, has broad development prospects in the optoelectronics field. We analyze the effects of trap states on the output characteristics of an inversion mode n-channel GaN SB-MOSFET using TCAD simulations. At the oxide/GaN interface below the gate, it was demonstrated that shallow donor-like traps were responsible for degrading the subthreshold swing (SS) and off-state current density (Ioff), while deep donor-like traps below the Fermi energy level were insignificant. In addition, shallow acceptor-like traps shifted the threshold voltage (Vt) positively and deteriorated the SS and on-state current density (Ion), while deep acceptor-like traps acted on a fixed charge. The output characteristics of the GaN SB-MOSFET were related to the resistive GaN path and the tunneling rate due to the traps at the metal (source, drain)/GaN interface. For the UV responses, the main mechanism for the negative Vt shift and the increases in the Ion and spectral responsivity was related to the photo-gating effect caused by light-generated holes trapped in the shallow trap states. These results will provide insights for UV detection technology and for a high-performance monolithic integration of the GaN SB-MOSFET.

Gain mechanism in GaN Schottky ultraviolet detectors

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

Effect of Asymmetric Schottky Barrier on GaN-based Metal-Semiconductor-metal Ultraviolet Detector

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Abnormal characteristic measurement of GaN Schottky junction UV detectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Graphene GaN-Based Schottky Ultraviolet Detectors

GaN Schottky Barrier Ultraviolet Detector

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Carrier Transport and Gain Mechanisms in $\beta$ –ga 2 O 3 -Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p - i - n epilayer

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Back-Illuminated Gan Metal-Semiconductor-Metal Uv Photodetector with High Internal Gain

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

A Study on the Gain Performance of SiC Ultraviolet Photodetectors at High Reverse Biased Voltage

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

An Ultraviolet Photodetector Based On Gan/Si

Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector