Abstract:Ultraviolet photodetectors have demonstrated a wide range of applications, e.g., missile launching, tracking detection, environmental monitoring, etc. This Article presents an ultraviolet photodetector based on a Ga2O3/GaN heterostructure that is equipped with tunable multiband detectivity via bias voltage and a record ultranarrow response. Particularly, this spectral response can be tuned from ultraviolet-C to ultraviolet-A by modulating the depletion region of the photodetector via adjusting bias. Under a higher bias, a photoresponse with a full-width at half-maximum of ∼4 nm at 363 nm is achieved. This ultranarrow response reaches 2.58 × 103 A/W and an external quantum efficiency of (8.84 × 105)% under 28 V bias. The photoluminescence, photoluminescence excitation, and light-absorption measurements suggest that this ultranarrow-band detectivity can be ascribed to the field-enhanced exciton ionization process in the GaN layer. The high responsivity can be attributed to the internal gain of the photodetector originating from the relatively large valence band offset between the Ga2O3 and GaN layers. This work provides a promising approach to the development of high-performance and versatile multiband ultraviolet photodetectors with electrical tunability. It is also worth highlighting that the features of inexpensive manufacturing and easy scalability are particularly attractive for mass production.

An Ultraviolet Photodetector Based On Gan/Si

Metal–semiconductor–metal GaN Ultraviolet Photodetectors on Si(111)

Photoconductive GaN ultraviolet detector

Photocurrent studies of ultraviolet detector based on GaN/6H-SiC

Study of Photocurrent Properties of GaN Ultraviolet Photoconductor Grown on 6H-Sic Substrate

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

High Responsivity GaN Ultraviolet Photodetector

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

High Quality Photoconductive Ultraviolet Gan/6h-Sic Detector and Its Properties

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

The Study on the Optical Properties of Gan Detector on the 6H-Sic Substrates

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Realization of In-Plane GaN Microwire Array Based Ultraviolet Photodetector with High Responsivity on a Si(100) Substrate

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Highly Sensitive Photodetector Based on the N-Si/p-gase Vertical Heterojunction

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector