Abstract:Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction was generated by depositing a Sn-doped n-type Ga2O3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R254 nm/ R400 nm = 5.9 × 103 and an ideal detectivity at 1.69 × 1013 cm·Hz1/2·W-1, which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10-11A), a high Iphoto/ Idark ratio (∼104), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron-hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/Sn:Ga2O3 pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems.

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Photocurrent studies of ultraviolet detector based on GaN/6H-SiC

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Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

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Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

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The Study on the Optical Properties of Gan Detector on the 6H-Sic Substrates

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

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Ultraviolet Photoconductive Detectors Based on Ga-doped ZnO Films Grown by Molecular-Beam Epitaxy

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Ga2O3/GaN-Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection

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A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

High-responsivity Dual-Band Ultraviolet Photodetector Based on Ga2O3/GaN Heterostructure.