Abstract:In this work, high-performance ultraviolet (UV) phototransistors (PTs) based on the p-GaN/AlGaN/GaN HEMT structure were reported. An innovative strategy making a tradeoff between the absorption thickness of the incident light and the retraction distance of the depletion region was developed for the first time. The optimal PTs exhibited a large photo-to-dark-current ratio (PDCR) of 1.30 × 10 11 , a high responsivity of 5.50 × 10 5 A/W, and a record-high UV-to-visible rejection ratio (UVRR) over 1 × 10 9 while maintaining a fast response time of 136.0 μs. Moreover, the devices present excellent weak light detection capability with a threshold light intensity as low as 7.90 nW/cm 2 , enabling direct detection of the 119.05 fW signal. Additionally, the measurement of the noise characteristics revealed that the low-frequency noise of the device originating from the trap dominated 1/f flicker noise, and a superior detectivity ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D *) above 1 × 10 18 cm·Hz 1/2 /W was achieved. The results suggest the enormous potential of p-GaN-based UV PTs for high-sensitivity visible-blind UV detection.

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