Abstract:In this work, high-performance ultraviolet (UV) phototransistors (PTs) based on the p-GaN/AlGaN/GaN HEMT structure were reported. An innovative strategy making a tradeoff between the absorption thickness of the incident light and the retraction distance of the depletion region was developed for the first time. The optimal PTs exhibited a large photo-to-dark-current ratio (PDCR) of 1.30 × 10 11 , a high responsivity of 5.50 × 10 5 A/W, and a record-high UV-to-visible rejection ratio (UVRR) over 1 × 10 9 while maintaining a fast response time of 136.0 μs. Moreover, the devices present excellent weak light detection capability with a threshold light intensity as low as 7.90 nW/cm 2 , enabling direct detection of the 119.05 fW signal. Additionally, the measurement of the noise characteristics revealed that the low-frequency noise of the device originating from the trap dominated 1/f flicker noise, and a superior detectivity ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D *) above 1 × 10 18 cm·Hz 1/2 /W was achieved. The results suggest the enormous potential of p-GaN-based UV PTs for high-sensitivity visible-blind UV detection.

High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Demonstration of AlGaN/GaN-based Ultraviolet Phototransistor with a Record High Responsivity over 3.6 × 107 A/W

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

High Performance Self‐Powered p+‐GaN/n−‐ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar‐Blind Imaging and Optical Communication

Comprehensive Analysis of Optoelectronic Performance of Ultraviolet Phototransistors Based on AlGaN/GaN Heterostructure

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors

Ga<sub>2</sub>O<sub>3</sub>/GaN Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection

Ga2O3/GaN-Based Planar Heterojunction Phototransistor for Ultraviolet Photodetection

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

A Self-Driven, Polarized-Liquid-based Ultraviolet Photodetector

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

Reach-Through-Collector Based 4H-SiC Phototransistor enabling nW/cm 2 UV Detection

A High Responsivity and Controllable Recovery Ultraviolet Detector Based on a WO3 Gate AlGaN/GaN Heterostructure with an Integrated Micro-Heater

ITO AlGaN/GaN Ultraviolet Broadband Photodetector With Exceeding Responsivity Beyond the ITO Transmittance Limitation

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor