Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

Wenxin Li,Yifu Wang,Guangyang Gu,Fangfang Ren,Dong Zhou,Weizong Xu,Feng Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1063/5.0227700

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Gain and response speed are two key performance parameters for high sensitivity photodetectors (PDs). However, the effect of incident light intensity on gain and transient response properties of AlGaN/GaN hetero-junction based PDs are still not fully understood. Here, we design and fabricate an AlGaN/GaN hetero-junction based ultraviolet (UV) PD with interdigitated electrodes formed by a conductive two-dimensional electron gas (2DEG) channel, which exhibits a low dark current of 2.92 × 10−11 A and a high responsivity of 3060 A/W at 10 V bias. The high-gain AlGaN/GaN 2DEG PD has a similar working mechanism to those of traditional phototransistors, but its device architecture is evidently simplified. By investigating the variation of gain and transient response characteristics of the 2DEG PD as a function of incident UV light intensity, it has been concluded that the gain of the PD in a low-light intensity region is dominated by hole accumulation-induced electron escape from the 2DEG, while in a high-light intensity region, the gain is dominated by photoconductivity effect and limited by carrier recombination. This study provides guidance for future practical applications of AlGaN/GaN-based PDs in complex UV illumination environments.