Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

Jianpeng Lei,Tao Zheng,Wanglong Wu,Zhaoqiang Zheng,Quansheng Zheng,Xiaozhou Wang,Wenbo Xiao,Jingbo Li,Mengmeng Yang

DOI: https://doi.org/10.1007/s40843-023-2736-6

2024-02-01

Science China Materials

Abstract:Gallium nitride (GaN) has garnered significant research interest for ultraviolet (UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta 2 NiSe 5 with high mobility is successfully stacked with unintentionally-doped GaN to creat an integrated mixed-dimensional Ta 2 NiSe 5 /GaN (2D/3D) van der Waals heterojunction with a typical type-I band alignment. The resulting Ta 2 NiSe 5 /GaN heterojunction exhibits excellent UV detection performance, with a pronounced light on/off ratio of 10 7 and a large responsivity of 1.22 × 10 4 A W −1 . Moreover, it demonstrates an enhanced detectivity up to 1.3 × 10 16 Jones under 365-nm light illumination at a bias of 4 V. The photodetector also exhibits a fast response speed of 1.22/3.16 ms. Remarkably, the device showcases exceptional stability, repeatability, and tolerance to harsh environmental conditions, including high temperature and acidic condition. Furthermore, leveraging the high responsivity, detectivity, and light on/off ratio of the photodetector, we successfully integrate this heterojunction device into UV optical communication, high-lighting its potential in information transmission.

materials science, multidisciplinary