Self-powered broadband photodetector based on Bi 2 Se 3 /GaN pn mixed-dimensional heterojunction with boosted responsivity
Z. Zeng,D. Wang,X. Fang,C. Zhao,B. Zhang,D. Liu,T. Chen,J. Pan,S. Liu,G. Liu,T. Liu,H. Jin,S. Jiao,L. Zhao,J. Wang,Zhi Zeng,Dongbo Wang,Xuan Fang,Chenchen Zhao,Bingke Zhang,Donghao Liu,Tianyuan Chen,Jingwen Pan,Sihang Liu,Gang Liu,Tong Liu,Hongyan Jin,Shujie Jiao,Liancheng Zhao,Jinzhong Wang
DOI: https://doi.org/10.1016/j.mtnano.2023.100372
IF: 10.3
2023-06-30
Materials Today Nano
Abstract:Self-powered broadband photodetectors (SPBDs) have received considerable attention because of their significance in optoelectronic applications. However, limited by problems inherent to the material, such as high dislocation density, complex heteroepitaxy processing of bulk materials, and the small photoabsorption cross section in atomically thin layers of two-dimensional materials, SPBD photodetectors with both a wide detection range and attractive response characteristics are difficult to fabricate. To address this difficulty, we describe herein the synthesis of n-Bi 2 Se 3 /p-GaN mixed-dimensional heterojunctions by the transfer method and their assembly into SPBD photodetectors. This photodetector offers both a wide spectral response range (ultraviolet to mid-infrared) and excellent response characteristics. The high responsivity (24554 A/W, 3V), remarkable I on / I off (223.8), and rapid rise and decay times ( τ r = 0.063 s and τ d = 0.043 s) benefit from the built-in electric field of the pn junction. The results of this research should facilitate the use of this emerging material for the design and fabrication of high-performance SPBD photodetectors.
materials science, multidisciplinary,nanoscience & nanotechnology