Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Weidong Song,Jiaxin Chen,Ziliang Li,Xiaosheng Fang
DOI: https://doi.org/10.1002/adma.202101059
IF: 29.4
2021-05-28
Advanced Materials
Abstract:<p>A self-powered, high-performance Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> MXene/GaN van der Waals heterojunction (vdWH)-based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i>/GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self-powered mode, including a large responsivity (284 mA W<sup>−1</sup>), a high specific detectivity (7.06 × 10<sup>13</sup> Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy-processing spray-deposition route for the fabrication of large-area UV photodiode arrays that exhibit highly uniform cell-to-cell performance. The MXene/GaN photodiode arrays with high-efficiency and self-powered ability show high potential for many applications, such as energy-saving communication, imaging, and sensing networks.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The paper is primarily dedicated to addressing the issues encountered by ultraviolet photodetectors (UV PDs) in practical applications, particularly focusing on the limitations of existing commercial UV photodetectors, such as the bulky size, high operating voltage, and fragile nature of vacuum tube devices, as well as the low quantum efficiency caused by the inherent narrow bandgap and indirect bandgap of silicon-based UV detectors. The paper proposes a self-powered high-efficiency UV photodetector based on a van der Waals heterojunction (vdWH) formed by Ti₃C₂Tx MXene and GaN. Specifically, the research team prepared Ti₃C₂Tx MXene films through a simple spray deposition method and integrated them with GaN to form a high-performance UV photodetector. This detector demonstrated an ultra-high internal quantum efficiency (IQE) exceeding 100%, an external quantum efficiency (EQE) exceeding 99%, a responsivity of up to 284 mA/W, a specific detectivity of 7.06×10^13 Jones, and a fast response speed (rise/fall times of 7.55 μs and 1.67 ms, respectively). Additionally, the detector exhibited significant photovoltaic behavior, achieving a photoelectric conversion efficiency of 7.33%. To realize the potential for large-scale production and application, the researchers also successfully prepared large-area UV photodetector arrays with uniform performance using the simple spray deposition method. These arrays demonstrated highly consistent performance between units, proving their application potential in energy-efficient communication, imaging, and sensing networks.