Abstract:A method to pattern‐grow high‐quality GaN thin films is introduced. The GaN photodetectors have excellent ultraviolet (UV) detection performance, include a high responsivity of 4.23 A/W and a respectable specific detectivity of 1.76 × 1012 Jones. Moreover, the photodetector arrays exhibit the strong homogeneity and repeatability, allowing it to function as a reliable UV image sensor with reasonable spatial resolution. GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN‐based ultraviolet (UV) photodetectors are the subject of in‐depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN‐based photodetectors array, large‐area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high‐quality GaN thin films for the assembly of an array of high‐performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo‐response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight/Idark ratio over 105, a high responsivity of 4.23 AW−1, and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.

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High-Performance Self-Driven Single Gan-Based P-I-N Homojunction One-Dimensional Microwire Ultraviolet Photodetector

High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions

Optimization of All Figure-of-Merits in Well-Aligned GaN Microwire Array Based Schottky UV Photodetectors by Si Doping

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire.

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Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Liquid‐Metal‐Assisted Synthesis of Patterned GaN Thin Films for High‐Performance UV Photodetectors Array

In Situ Conformal Coating of Polyaniline on GaN Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors

Patterned Ga 2 O 3 nanowires synthesized by CVD method for High-performance self-powered ultraviolet photodetector

Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

High Performance Self-Powered Ultraviolet Photodetectors Based on Electrospun Gallium Nitride Nanowires

Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Vertically Aligned GaN Nanorod Arrays/p-Si Heterojunction Self-Powered UV Photodetector with Ultrahigh Photoresponsivity.

Integrated GaN Prism Array Self‐Powered Photodetector on Si for Ultraviolet Imaging and Communication