Abstract:Based upon GaN-on-Si wafers with a Al0.24Ga0.76N/AlN/GaN heterostructure, metal–semiconductor–metal photodetectors (MSM PDs) with nonplanar structure geometry are proposed for ultraviolet (UV) light detection. Although the presence of a highly conductive two-dimensional electron gas (2DEG) channel in the Al0.24Ga0.76N/AlN/GaN heterostructure is beneficial for realizing a high-electron-mobility transistor with a drain current of 600 mA/mm and a transconductance of 96 mS/mm, a high dark current is also observed in Schottky-barrier based MSM PDs. Using the nonplanar structure design for the MSM PDs (i.e., one Schottky contact formed on the top surface of the AlGaN mesa while the other is on the GaN buffer) achieves a significant decrease in PD’s dark current (<6 × 10−10 A). In addition, an anomalous increase in dark current of the proposed MSM PDs was found at forward bias, which could be attributed to the reduced potential barrier of the electrons in 2DEG and/or the lowering of the Schottky barrier height by hole trapping at the metal/semiconductor interface. Due to the improved signal to noise ratio and increased dissociation of the photogenerated carriers at the reverse junction (i.e., the reversely biased Schottky contact), the proposed MSM PDs operating at reverse bias exhibit enhanced UV photoresponsivity at λ < 360 nm. In addition to being used for UV light detection, these MSM PDs with a 3-dB bandwidth of 29.6 Hz are also useful for potential optical communications applications.

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

Back-Illuminated Gan Metal-Semiconductor-Metal Uv Photodetector with High Internal Gain

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

Dislocation density control of GaN epitaxial film and its photodetector

A Study of Al0.3Ga0.7N Metal-semiconductor-metal UV Photodiodes

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p - i - n epilayer

An Ultraviolet Photodetector Based On Gan/Si

Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Metal–semiconductor–metal GaN Ultraviolet Photodetectors on Si(111)

AlGaN MSM UV Photodetector

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors