Abstract:The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties and myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top-down processes or achieving extensive control over the large-area growth of these microstructures via bottom-up methods, thereby impacting their optical and electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) on patterned Si substrates, devoid of any catalyst. These GaN TPAs feature highly ordered, large-scale structures, attributed to the utilization of 3D Si substrates and thin AlN interlayers to alleviate epitaxial strains and limit dislocation formation. Comprehensive characterization via scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and cathodoluminescence attests to the superior structural and optical attributes of these crystals. Furthermore, photoluminescence and ultraviolet (UV)-visible diffuse reflectance spectroscopy reveal sharp band-edge emission and significant light trapping in the UV bands. Employing these GaN TPAs, we constructed metal-semiconductor-metal visible-blind UV photodetectors (PDs) incorporating Ti3C2 MXene as Schottky electrodes. These PDs display exceptional responsivity, achieving 5.32 × 103 mA/W at 255 nm and an ultrahigh UV/visible rejection ratio (R255nm/R450nm) approaching 106, which are 1-2 orders of magnitude higher than most recently reported works. This exploration showcases novel GaN-based microstructures characterized by uniformity, ordered geometry, and exemplary crystalline integrity, paving the way for developing optoelectronic applications.

Dislocation density control of GaN epitaxial film and its photodetector

High Responsivity and Low Dark Current Nonpolar GaN-based Ultraviolet Photo-Detectors

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

GaN-based Back-Illuminated Ultraviolet Photodetector with an Absorption Layer Compensation Doping

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Optimized photoresponse performances in vertical and horizontal photodetectors based on freestanding GaN membranes

High Responsivity GaN Ultraviolet Photodetector

High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection

High Performance GaN-Based Ultraviolet Photodetector Via Te/Metal Electrodes.

Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors Via Interdigitated Structure

High-Performance Self-Powered Ultraviolet Photodetector Based On Nano-Porous Gan And Copc P-N Vertical Heterojunction

Enhancing Performance of GaN/Ga2 O3 P-N Junction Uvc Photodetectors via Interdigitated Structure.

High responsivity GaN nanowire UVA photodetector synthesized by hydride vapor phase epitaxy

High-performance Nonpolar A-Plane GaN-based Metal–semiconductor–metal UV Photo-Detectors Fabricated on LaAlO3 Substrates

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors