Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Dislocation density control of GaN epitaxial film and its photodetector

Influence of Defects in N−-Gan Layer on the Responsivity of Schottky Barrier Ultraviolet Photodetectors

High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Optimized photoresponse performances in vertical and horizontal photodetectors based on freestanding GaN membranes

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

Enhanced Performance of Gan Nanobelt-Based Photodetectors by Means of Piezotronic Effects

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

High Responsivity and Low Dark Current Nonpolar GaN-based Ultraviolet Photo-Detectors

Role of Ga Vacancies in Enhancing the Leakage Current of GaN Schottky Barrier Ultraviolet Photodetectors

Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors Via Interdigitated Structure

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

GaN-based Back-Illuminated Ultraviolet Photodetector with an Absorption Layer Compensation Doping