Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Effects of impurity band on multiphoton photocurrent from InGaN and GaN photodetectors

High-Performance Self-Powered Ultraviolet Photodetector Based On Nano-Porous Gan And Copc P-N Vertical Heterojunction

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

High Switch Ratio, Self-Powered Ultraviolet Photodetector Based on a ZnOEP/GaN P-N Heterojunction with Porous Structure on GaN

Dislocation density control of GaN epitaxial film and its photodetector

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Engineering GaN/AuNC core–shell nanowire heterojunctions by gold nanoclusters with excitation-dependent behavior for enhancing the responsivity and stability of self-driven photodetectors

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 Pn Junction

Self-powered filterless narrowband AgNWs@ZnO:Ga/AlN/InGaN heterojunction photodetector for ultraviolet light intensimeter application

Vertically Aligned GaN Nanorod Arrays/p-Si Heterojunction Self-Powered UV Photodetector with Ultrahigh Photoresponsivity.

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

An Ultraviolet Photodetector Based On Gan/Si