Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

Effects of impurity band on multiphoton photocurrent from InGaN and GaN photodetectors

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Material Properties of III–V Semiconductors for Lasers and Detectors

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects

Characteristics of Optoelectronic Measurement for Wide Band-Gap Semiconductor Materials

Current Transport Mechanisms of InGaN Metal-Insulator-semiconductor Photodetectors

Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates