Abstract:Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as Shockley-Reed-Hall and Auger recombinations, electron-hole wavefunction separation from polarization charges, carrier leakage, and current crowding are identified as the primary contributors to efficiency droop. Auger recombination is a critical contributor owing to its cubic dependence on carrier density, which can not be circumvented using an advanced physical layout. Here, we demonstrate a potential solution through the positive effects from an optical cavity in suppressing the Auger recombination rate. Besides the phenomenon being fundamentally important, the advantages are technologically essential. The observations are manifested by the ultrafast transient absorption pump-probe spectroscopy performed on an InGaN/GaN-based multi-quantum well heterostructure with external DBR mirrors of varying optical confinement. The optical confinement modulates the nonlinear carrier and photon dynamics and alters the rate of dominant recombination mechanisms in the heterostructure. The carrier capture rate is observed to be increasing, and the polarization field is reducing in the presence of optical feedback. Reduced polarization increases the effective bandgap, resulting in the suppression of the Auger coefficient. Superluminescent behavior along with enhanced spectral purity in the emission spectra in presence of optical confinement is also demonstrated. The improvement is beyond the conventional Purcell effect observed for the quantum-confined systems.

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Inter and intra band impurity-related absorption in (In,Ga)N/GaN QW under composition, size and impurity effects

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Effects of impurity band on multiphoton photocurrent from InGaN and GaN photodetectors

Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.