Abstract:Light emitting diodes based on c-plane (In,Ga)N/GaN quantum wells can have >90% emission efficiency at modest current densities but this drops significantly at higher excitation, an effect known as efficiency droop that limits device efficacy at high brightness. Several explanations for this have been proposed including the saturation of carrier localisation sites at high excitation densities, resulting in a greater exposure of carriers to defects and hence a significant increase in the associated non-radiative recombination processes. Here, power- and temperature-dependent photoluminescence spectroscopy of c-plane (In,Ga)N/GaN quantum wells is used to investigate the relationship between the saturation of localised states and emission efficiency. For the samples studied, we find that the saturation of localised sites broadly coincides with the onset of efficiency droop. However, it is also found that as the localised states saturate with increasing excitation, the relative contribution of defect-associated non-radiative processes to overall recombination decreases rather than increases. Based on these observations and on modelling of recombination processes in the quantum well, it is concluded that the saturation of localised states does not significantly contribute to the reduction in emission efficiency at high excitation. Our studies rather suggest that defect-related non-radiative recombination is out-competed by radiative and Auger-Meitner recombination at the carrier densities required for saturation.

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Electroluminescence Induced by Photoluminescence Excitation in GaInN/GaN Light-Emitting Diodes

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination

Internal Quantum Efficiency and Non-Radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

The Study on the Droop Effect in the InGaN/AlGaInN MQWs with Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Understanding Efficiency Droop Effect in InGaN/GaN Multiple-Quantum-well Blue Light-Emitting Diodes with Different Degree of Carrier Localization

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Optical Properties and Exciton Localization in Ganas/Gaas

Ultrafast Hot Carrier Dynamics in GaN and its Impact on the Efficiency Droop

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN