Abstract:Light emitting diodes based on c-plane (In,Ga)N/GaN quantum wells can have >90% emission efficiency at modest current densities but this drops significantly at higher excitation, an effect known as efficiency droop that limits device efficacy at high brightness. Several explanations for this have been proposed including the saturation of carrier localisation sites at high excitation densities, resulting in a greater exposure of carriers to defects and hence a significant increase in the associated non-radiative recombination processes. Here, power- and temperature-dependent photoluminescence spectroscopy of c-plane (In,Ga)N/GaN quantum wells is used to investigate the relationship between the saturation of localised states and emission efficiency. For the samples studied, we find that the saturation of localised sites broadly coincides with the onset of efficiency droop. However, it is also found that as the localised states saturate with increasing excitation, the relative contribution of defect-associated non-radiative processes to overall recombination decreases rather than increases. Based on these observations and on modelling of recombination processes in the quantum well, it is concluded that the saturation of localised states does not significantly contribute to the reduction in emission efficiency at high excitation. Our studies rather suggest that defect-related non-radiative recombination is out-competed by radiative and Auger-Meitner recombination at the carrier densities required for saturation.

Internal Quantum Efficiency and Non-Radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities

Invalidation of the Acquisition of Internal Quantum Efficiency Using Temperature-Dependent Photoluminescence in InGaN Quantum Wells with High Threading Dislocation Density

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Photoluminescence and Photoluminescence Excitation Spectra of In/sub 0.2/ga/sub 0.8/N-Gan Quantum Wells: Comparison Between Experimental and Theoretical Studies

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Carrier Recombination Mechanisms and Efficiency Droop in GaInN/GaN Light-Emitting Diodes

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

A Comparative Study of Photoluminescence Internal Quantum Efficiency Determination Method in InGaN/GaN Multi-Quantum-wells

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Localized Exciton Dynamics in AlInGaN Alloy