Abstract:A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer on a thermoelectric cooler mount. We used infrared thermal radiation images of the black-painted area on the dummy wafer and an unbiased LED wafer at two different temperatures to determine the factors that degrade the accuracy of temperature measurement, i.e., the non-uniform response of the instrument, superimposed offset radiation, reflected radiation, and emissivity map of the LED surface. By correcting these factors from the measured infrared thermal radiation images of biased LEDs, we determined a precise absolute temperature image. Consequently, we could observe from where the local self-heat emerges and how it distributes on the emitting area of the LEDs. The experimental results demonstrated that highly localized self-heating and a remarkable temperature gradient, which are detrimental to LED performance and reliability, arise near the p-contact edge of the LED surface at high injection levels owing to the current crowding effect.

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Junction Temperature Analysis In Green Light Emitting Diode Dies On Sapphire And Gan Substrates

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Analysis of Junction Temperatures in High-Power GaN-based LEDs

Analysis of Thermal Properties of GaInN Light-Emitting Diodes and Laser Diodes

A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

Enhanced high-temperature performance of GaN light-emitting diodes grown on silicon substrates

High-temperature Performance of InGaN-based Amber Micro-Light-emitting Diodes Using an Epitaxial Tunnel Junction Contact

On the Temperature Dependence of Electron Leakage from the Active Region of Gainn/Gan Light-Emitting Diodes

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography

Internal Quantum Efficiency and Non-Radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities

Temperature Dependence Of The Quantum Efficiency In Green Light Emitting Diode Dies