Abstract:In this work, we demonstrated the thermal analysis of different flip-chip bonding designs for high power GaN HEMT developed for power electronics applications, such as power converters or photonic driver applications, with large gate periphery and chip size, as well as an Au metal heat-spreading layer deposited on top of a planarized dielectric/passivation layer above the active region. The Au bump patterns can be designed with high flexibility to provide more efficient heat dissipation from the large GaN HEMT chips to an AlN package substrate heat sink with no constraint in the alignment between the HEMT cells and the thermal conduction bumps. Steady-state thermal simulations were conducted to study the channel temperatures of GaN HEMTs with various Au bump patterns at different levels of current and voltage loadings, and the results were compared with the conventional face-up GaN die bonding on an AlN package substrate. The simulations were started from a single finger isolated HEMT cell and then extended to multiple fingers HEMT cells (total gate width > 40 mm) to investigate the "thermal cross-talk" effect from neighboring devices. Thermal analysis of the GaN HEMT under pulse operation was also performed to better reflect the actual conditions in power conversion or pulsed laser driver applications. Our analysis provides a combinational assessment of power GaN HEMT dies under a working condition (e.g., 1MHz, 25% duty cycle) with different flip chip packaging schemes. The analysis indicated that the channel temperature rise (∆T) of a HEMT cell in operation can be reduced by 44~46% by changing from face-up die bonding to a flip-chip bonding scheme with an optimized bump pattern design.

Analysis of Junction Temperatures in High-Power GaN-based LEDs

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Thermal Analysis and Design of High-Power LED Street Light

Analysis of thermal spreading resistance in high power LED package and its design optimization

Thermal modeling, analysis, and management of high-power GaN transistors

Thermal Design of GaN-based High-power LED Module

Effects of Junction Temperature and Its Variations on the Performance of GaN‐based High Power Flip‐chip LEDs

Junction Temperature Measurement and Luminous Properties Research of High-Power LED

Junction temperature and reliability of high-power flip-chip light emitting diodes

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

Thermal Analysis of High Power GaN-based Light Emitting Diode

Thermal design and analysis of power LED packaging based on graphene

Thermal Dispersion of GaN-based Power LEDs

High-temperature Performance of InGaN-based Amber Micro-Light-emitting Diodes Using an Epitaxial Tunnel Junction Contact

A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Effects of Bonding Materials on Optical–Thermal Performances and High-Temperature Reliability of High-Power LED

Study on 3D Thermal Transport in Micro-Leds on GaN Substrate at the Level of Kw/cm2

Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Analysis of Material Science Problems in High-power LED Process