Abstract:This dissertation presents a serial study on optical properties of different semiconductor materials. Three main types of studies are addressed: The role of doping levels of N and Al atoms in the room-temperature photoluminescence (PL) of 4H-SiC films for optoelectronic applications; the use of a basic Monte Carlo method combined with probability calculations of the time-dependent Schroedinger equation to manifest multi-photon absorption and emission of II-VI compound quantum dots (QDs) for bioimaging; a theoretical quantum chemistry approach to study of structure and optical properties of InGaAsN and GaAs clusters for laser technology applications. 4H-SiC films were grown on AlN/SiC(100) substrates by a chemical vapour deposition (CVD) system. Three well-defined room-temperature PL peaks close to the band-gap energy were observed. By a detailed theoretical analysis of optical transitions in the samples, it was found that the PL peaks are most probably due to the optical transitions between impurity levels and band edges, and the transition between the second minimum of the conduction band and the top of the valance band. Special attention has been paid to effects of doping levels of N and Al impurities. Optical transitions in several II-VI semiconductor QDs have been studied by a quantum Monte Carlo method. We model the QD energy band structure by a spherical square quantum well and the electrons in the conduction band and holes in the valence band by the effective mass approximation. The optical probabilities of optical transitions induced by ultrafast and ultraintense laser pulses are calculated from the time-dependent Schroedinger equation. With the inclusion of the nonradiative electron-phonon processes, the calculated absorption and emission spectra are in agreement with experimental work. The dynamic processes and up-conversion luminescence of the QDs, required for many applications including bio-imaging, are demonstrated. Quantum chemistry is used to study InGaAsN and GaAs nano systems. The molecular structures of a series of dilute-nitride zinc blende InGaNAs clusters are examined from the energy point of view with a semi-empirical method. The optimum cluster configurations are identified by which we can identify the detailed bonding structures and the effects of In mole fraction. After proper geometry construction, an effective central insertion scheme has been implemented to study the electronic band structures of GaAs at the first-principles level. The formation of energy bands and quantum confinement effects have been revealed, thus providing theoretical support for laser design.

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

First-principles Study of the Light-emitting Mechanism on (in,al)gan Alloys with Different Configurations

Electron Localization and Emission Mechanism in Wurtzite (al, In, Ga)N Alloys

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Radiative Recombination Mechanism of Carriers in InGaN/AlInGaN Multiple Quantum Wells with Varying Aluminum Content

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Correlation Between the Structural and Cathodoluminescence Properties in Ingan/Gan Multiple Quantum Wells with Large Number of Quantum Wells

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Quantum Chemistry Study of Energy Band Structures of GaAs Nano Clusters

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Temperature and Source Flux Dependence of Light Emission, in Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires

Influence of Interface Structure in the Active Region on Photoluminescence in InGaN/GaN Quantum Wells