Abstract:In this study, ion‐implantation and metal‐insulator‐semiconductor (MIS) schemes are developed to isolate the channel region of AlGaN/GaN photo‐HEMTs on Si substrates. Owing to the reduced leakage path, the ion‐implanted and MIS photo‐HEMTs offer remarkably low dark current as well as large photocurrent compared to the MESA photo‐HEMTs. Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo‐to‐dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa‐isolated photo‐HEMT is limited due to current leakage paths through the side wall and AlGaN barrier. In this work, apart from conventional mesa‐type isolation, ion implantation and metal‐insulator‐semiconductor (MIS) schemes are adopted to isolate the channels of AlGaN/GaN photo‐HEMTs. A significant reduction in dark current is achieved for MIS photo‐HEMT of around four and three orders of magnitude as compared to those of conventional mesa‐ and ion‐implanted photo‐HEMTs, respectively. Moreover, the responsivity and PDCR of MIS photo‐HEMT are around three and four orders of magnitude higher than those of conventional mesa‐isolated photo‐HEMT. Subsequently, MIS photo‐HEMT on Si substrate has achieved a very high detectivity of 4.63 × 1016 Jones at the UV incidence wavelength of 360 nm. The results presented in this work establish the advantages of MIS photo‐HEMT over other types of photo‐HEMTs. In addition, compatibility with GaN device fabrication technology and significantly enhanced optoelectronic performance suggest AlGaN/GaN MIS photo‐HEMTs as a promising candidate for a variety of advanced UV sensing applications.

Current Transport Mechanisms of InGaN Metal-Insulator-semiconductor Photodetectors

Photoresponse of the in 0.3 Ga 0.7 N Metal–insulator–semiconductor Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

High-Performance Β-Ga2o3 MISIM Solar-Blind Photodetectors with an Interfacial AlN Layer

Ga2O3 Metal–insulator-Semiconductor Solar-Blind Photodiodes with Plasmon-Enhanced Responsivity and Suppressed Internal Photoemission

High-Performance β-Ga 2 O 3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Photocurrent Characteristics of Two-Dimensional-Electron-Gas-Based Algan/Gan Metal-Semiconductor-Metal Photodetectors

Investigation of Semi-Insulating Gallium Arsenide Photoconductive Photodetectors

High Performance Back-Illuminated MIS Structure AlGaN Solar-Blind Ultraviolet Photodiodes

A Study of Al0.3Ga0.7N Metal-semiconductor-metal UV Photodiodes

Photoelectric Characteristics of Metal/Ingan/Gan Heterojunction Structure

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN