Abstract:A novel fabricated pin heterojunction photodetector with a fully depleted active region based on β‐Ga2O3 and GaN exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms. Ga2O3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there exist two issues for Ga2O3‐based photodetectors: first, it is difficult to achieve reliable p‐type Ga2O3 and therefore form a homojunction photodetector, and the other is related with the slow response speed of Ga2O3‐based photodetectors. In this work, a self‐powered solar‐blind photodetector with a fast response using a p‐GaN/i‐Ga2O3/n‐Ga2O3 (pin) heterojunction with a fully depleted active region is realized, where i‐Ga2O3 serves as the main light‐absorbing active region. The device exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms, respectively, without an external power supply. A detailed study of the interfacial electronic structure between p‐GaN and i‐Ga2O3 reveals a conduction band offset and valence band offset of 0.16 and 1.37 eV, respectively. Meanwhile, it has a large built‐in potential of 1.03 eV and a wide depletion region width of 235 nm in the i‐Ga2O3 side of heterojunction. It is believed that excellent device performance comes from a suitable energy band structure and wide depletion region.

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

High-Performance Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Ultra-Shallow Bevel Edge Terminations

High Deep-Ultraviolet Quantum Efficiency Gan P-I-N Photodetectors with Thin P-Gan Contact Layer

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Quasi-direct UV/blue GaP avalanche photodetectors

Study on Leakage Current of Thin p-layer GaN p-i-n Ultraviolet Detector

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

A Gan P-I-P-I-N Ultraviolet Avalanche Photodiode

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga2O3/GaN PIN Heterojunction with a Fully Depleted Active Region

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors

Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure

120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN