A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga2O3/GaN PIN Heterojunction with a Fully Depleted Active Region

Wencheng Chen,Xiangyu Xu,Minghang Li,Siliang Kuang,Kelvin H. L. Zhang,Qijin Cheng

DOI: https://doi.org/10.1002/adom.202202847

IF: 9

2023-02-21

Advanced Optical Materials

Abstract:A novel fabricated pin heterojunction photodetector with a fully depleted active region based on β‐Ga2O3 and GaN exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms. Ga2O3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there exist two issues for Ga2O3‐based photodetectors: first, it is difficult to achieve reliable p‐type Ga2O3 and therefore form a homojunction photodetector, and the other is related with the slow response speed of Ga2O3‐based photodetectors. In this work, a self‐powered solar‐blind photodetector with a fast response using a p‐GaN/i‐Ga2O3/n‐Ga2O3 (pin) heterojunction with a fully depleted active region is realized, where i‐Ga2O3 serves as the main light‐absorbing active region. The device exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms, respectively, without an external power supply. A detailed study of the interfacial electronic structure between p‐GaN and i‐Ga2O3 reveals a conduction band offset and valence band offset of 0.16 and 1.37 eV, respectively. Meanwhile, it has a large built‐in potential of 1.03 eV and a wide depletion region width of 235 nm in the i‐Ga2O3 side of heterojunction. It is believed that excellent device performance comes from a suitable energy band structure and wide depletion region.

materials science, multidisciplinary,optics