Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response

Jiangang Yu,Linpeng Dong,Bo Peng,Lei Yuan,Yu Huang,Lichun Zhang,Yuming Zhang,Renxu Jia

DOI: https://doi.org/10.1016/j.jallcom.2019.153532

IF: 6.2

2020-04-01

Journal of Alloys and Compounds

Abstract:<p>Solar-blind photodetectors have received increasing attentions due to their widely applications in military and civil aspects. However, most of the photodetectors often suffer from relatively slow response speeds and high driving voltages. Therefore, it is desirable to develop the self-powered photodetectors with a fast response speed. In this manuscript, self-powered and fast response photodetectors based on β-Ga₂O₃/4H–SiC pn heterojunction are demonstrated by depositing β-Ga₂O₃ films on p-type 4H–SiC templates using Pulse Laser Deposition method. The detectors exhibit an ultrahigh current <em>I</em>_<em>on</em><em>/I</em>_<em>off</em> ratio more than 10³ (∼1655) at the light intensity of 91 μW/cm² and a fast photo-response speed (a rise time of 11 ms and a decay time of 19 ms) under zero-bias voltage, which are attributed to the quickly separation of the photogenerated electron-hole pairs driven by the built-in electric field at the interface of β-Ga₂O₃/4H–SiC pn heterojunction. In addition, the detectors also show a responsivity of 10.35 mA/W with a high detectivity of 8.8 × 10⁹ Jones, and the maximum linear dynamic range is reached 64.38 dB. The generality of the above excellent results suggests that the β-Ga₂O₃/4H–SiC pn photodetectors have great potential in UV detection. Finally, the electronic transport mechanism of the β-Ga₂O₃/4H–SiC pn heterojunction has been analyzed with the energy band diagram.</p>

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering