High performance solar-blind UV detector based on β-Ga2O3/GaN nanowires heterojunction

Wenhao Ding,Xianquan Meng

DOI: https://doi.org/10.1016/j.jallcom.2020.157564

IF: 6.2

2021-06-01

Journal of Alloys and Compounds

Abstract:Gallium nitride nanowires and β-Ga2O3 nanowires were prepared by chemical vapor deposition. A solar-blind ultraviolet detector was fabricated based on β-Ga2O3/GaN nanowires heterojunction. The UV detector exhibits excellent response properties to deep ultraviolet with wavelength of 254 nm. The device exhibits a photo-to-dark current ratio of 1.375 × 103 and a high detectivity of 1.2 × 1011 Jones at 10 V bias Therefore, the responsivity of the UV detector is 27.5 mA/W under 254 nm ultraviolet light (8 mW/cm2) at 10 V bias voltage. The detector also has the advantages of easy preparation, low dark current, high rejection ratio, fast response, good stability and repeatability. The design method of β-Ga2O3/GaN nanowires heterojunction has the advantages of novelty and simplicity, which provides a new approach to fabricate a heterojunction detector.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering