Solar-blind Ultraviolet Photodetector Based on Vertically Aligned Single-Crystalline Β-Ga2o3 Nanowire Arrays

Liying Zhang,Xiangqian Xiu,Yuewen Li,Yuxia Zhu,Xuemei Hua,Zili Xie,Tao,Bin Liu,Peng Chen,Rong Zhang,Youdou Zheng
DOI: https://doi.org/10.1515/nanoph-2020-0295
IF: 7.5
2020-01-01
Nanophotonics
Abstract:Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.
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