β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

Shunli Wang,Kai Chen,Hailin Zhao,Chenran He,Chao Wu,Daoyou Guo,Nie Zhao,Goran Ungar,Jingqin Shen,Xulong Chu,Peigang Li,Weihua Tang
DOI: https://doi.org/10.1039/c8ra10371b
2019-02-19
Abstract:Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic β-Ga2O3 NRAs with an average diameter/length of 500 nm/1.287 μm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on β-Ga2O3 NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity (R λ) of 10.80 mA W-1 and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm-2, exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.
What problem does this paper attempt to address?