Abstract:This work reports high-performance homojunction gallium nitride (GaN) p-i-n (PIN) avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ~1.8° shallow-bevel-mesa edge termination. High-quality p-i-n GaN epitaxial layers were grown using metalorganic chemical vapor deposition (MOCVD), and the device edge termination was achieved by multistep pseudo gray-scale lithography followed by photoresist reflow and dry etching of the bevel mesa. Fabricated GaN APDs showed an ultralow dark current density A/cm2 in the low-mid reverse bias voltage region prior to avalanche breakdown and achieved a current-limited photocurrent gain of under deep-ultraviolet (DUV) illumination at nm and a reverse bias −107 V. The total current density without illumination was in the order of A/cm2 at the onset of avalanche breakdown. The avalanche breakdown characteristic was confirmed by temperature-dependent J–V studies, with a derived positive temperature coefficient of 0.02 V/K for the breakdown voltage (BV). The analysis of the temperature-dependent reverse-bias characteristics indicated that the reverse leakage current components before avalanche could be attributed to trap-assisted tunneling (TAT) and phonon-assisted tunneling (PAT) processes.

Study on Leakage Current of Thin p-layer GaN p-i-n Ultraviolet Detector

Influence of Penetrating V-Pits on Leakage Current of Gan Based P-I-N Uv Detector

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Role of Ga Vacancies in Enhancing the Leakage Current of GaN Schottky Barrier Ultraviolet Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure

Large Area GaN Schottky Photodiode with Low Leakage Current

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

High Deep-Ultraviolet Quantum Efficiency Gan P-I-N Photodetectors with Thin P-Gan Contact Layer

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

GaN Schottky Barrier Ultraviolet Detector

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Leakage Current in GaN-on-GaN Vertical GaN SBDs Grown by HVPE on Native GaN Substrates