Abstract:Many emerging GaN electronic and optoelectronic devices comprise p-type gallium nitride (p-GaN) layers buried below n-type layers, which often show nonuniform (i.e., laterally graded) acceptor concentration ( after activation. In power devices, such buried p-GaN layer could be thick and lightly doped, yet its voltage blocking characteristics remain unclear. This work fills this gap by studying the breakdown voltage ( and leakage current of vertical GaN p-n+ diodes with the uniform and nonuniform profiles in the 3.8- m-thick, lightly doped p-GaN drift region. The nonuniform is produced by burying the p-GaN under an n-GaN cap, followed by sidewall activation. The diodes show up to over 400 V, which is the highest reported in vertical GaN devices with a p-type drift region. For the sidewall-activated diodes, their is determined either by the peak electric field at the device edge (with the highest activation ratio) or the punchthrough in the center (with the lowest activation ratio). An additional p++-GaN cap is essential to suppress the latter breakdown mechanism. For devices with either uniform or nonuniform , their leakage current can be explained by variable range hopping (VRH), while in the sidewall-activated devices, the edge region instead of the total device area dominates the leakage current. These results provide key guidance for the design and processing of future high-voltage GaN devices with buried p-GaN, such as the GaN superjunction.

Influence of Penetrating V-Pits on Leakage Current of Gan Based P-I-N Uv Detector

Study on Leakage Current of Thin p-layer GaN p-i-n Ultraviolet Detector

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

High Deep-Ultraviolet Quantum Efficiency Gan P-I-N Photodetectors with Thin P-Gan Contact Layer

Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Insight into Gain and Transient Response Characteristics of AlGaN/GaN Hetero-Junction Based UV Photodetectors: Case Study on the Role of Incident Light Intensity

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Enhancing Performance of GaN/Ga2O3 P-N Junction Uvc Photodetectors Via Interdigitated Structure

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN