Abstract:Electron leakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers are generally applied in the p-type region. However, few works have discussed the electron blocking effect of a p-cladding layer, which is found to be critical in suppressing the leakage currents of an LD. In this work, we compare the blocking performance of uniform AlGaN p-cladding layers and AlGaN/GaN superlattice (SL) p-cladding layers with the same average Al component respectively. Both light-emitting diodes (LEDs) and LDs with the same epitaxy structures are characterized by light-current (L-I) and current-voltage (I-V) measurements. The latest analytical model of leakage currents is applied to fit the L-I curves of LEDs, where smaller leakage coefficients are observed in the SL structures compared with the uniform-layer structures. Eighty LDs with varying ridge widths are studied by comparing the threshold current densities, slope efficiencies, and PCEs. The SL-based p-cladding layer shows statistically significant advantages over a uniform AlGaN layer. The blocking effects of both scattering- and bound-state electrons in SLs are investigated theoretically. Repetitive reflection and thermal relaxation are responsible for the blocking effect of scattering-state electrons. Simulation results indicate that the tunneling effect of bound-state electrons through a miniband mechanism is insignificant at a large injection level due to a negative differential conductivity by the Esaki-Tsu effect. We demonstrate a better electron blocking performance of p-cladding layers based on SLs than uniform AlGaN layers in GaN-based LDs.

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Reverse Leakage Current in AlGaN-based Ultraviolet Light-Emitting Diodes

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs

Transport-mechanism Analysis of the Reverse Leakage Current in GaInN Light-Emitting Diodes

Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Research on the Current-voltage Characteristics of GaN-based High Power Flip-chip Blue LED

Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

On the exciton-assisted radiative recombination via impurity trap levels in AlGaN deep ultraviolet light-emitting diodes

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Thermal behavior of AlGaN-based deep-UV LEDs

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

On the Temperature Dependence of Electron Leakage from the Active Region of Gainn/Gan Light-Emitting Diodes

Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Different I – V Behaviors and Leakage Current Mechanisms in AlGaN Solar-Blind Ultraviolet Avalanche Photodiodes

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer