Abstract:The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220-240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for mass adoption. Over the last two decades, several research groups have worked out that the optical power of GaN-based LEDs significantly decreases during operation, and with the passage of time, many mechanisms responsible for the degradation of such devices start playing their roles. Only a few attempts, to explore the reliability of these LEDs, have been presented so far which provide very little information on the output power degradation of these LEDs with the passage of time. Therefore, the aim of this review is to summarize the degradation factors of AlGaN-based near UV-LEDs emitting in the range of 200-350 nm by means of combined optical and electrical characterization so that work groups may have an idea of the issues raised to date and to achieve a wavelength range needed for disinfecting the environment from SARS-CoV-2. The performance of devices submitted to different stress conditions has been reviewed for the reliability of AlGaN-based UV-LEDs based on the work of different research groups so far, according to our knowledge. In particular, we review: (1) fabrication strategies to improve the efficiency of UV-LEDs; (2) the intensity of variation under constant current stress for different durations; (3) creation of the defects that cause the degradation of LED performance; (4) effect of degradation on C-V characteristics of such LEDs; (5) I-V behavior variation under stress; (6) different structural schemes to enhance the reliability of LEDs; (7) reliability of LEDs ranging from 220-240 nm; and (8) degradation measurement strategies. Finally, concluding remarks for future research to enhance the reliability of near UV-LEDs is presented. This draft presents a comprehensive review for industry and academic research on the physical properties of an AlGaN near UV-LEDs that are affected by aging to help LED manufacturers and end users to construct and utilize such LEDs effectively and provide the community a better life standard.

Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations

Optical power degradation mechanisms in 271 nm AlGaN-based deep ultraviolet light-emitting diodes

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Study on the Degradation Performance of AlGaN-Based Deep Ultraviolet LEDs under Thermal and Electrical Stress

Examining Degradation Mechanisms in Strain-Relaxed AlGaN-Based UV-C Light-Emitting Diodes Using Raman Spectroscopy

Reliability Analysis of AlGaN-Based Deep UV-LEDs

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy

Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics

Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate Performance Parameters of 275 nm AlGaN-based UV-C LED

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Improved Reliability of AlGaN-Based Deep Ultraviolet LED With Modified Reflective N-Type Electrode

Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers