Abstract:Abstract The optoelectronic properties of semiconducting aluminum gallium nitride (AlGaN)-based ultraviolet-B (UVB) light-emitting diodes (LEDs) are crucial for real-world medical applications such as cancer therapy and immunotherapy. However, the performance of AlGaN-based UVB LED devices is still poor due to the low hole injection efficiency. Therefore, we have numerically investigated the performance of AlGaN-based UVB LEDs for the suppression of efficiency droop as well as for the enhancement of hole injection in the multiquantum wells (MQWs). The influence of the undoped (ud)-AlGaN final quantum barrier (FQB), as well as the Mg-doped multiquantum barrier electron blocking layer (p-MQB EBL), on the efficiency droop has been focused on specifically. To evaluate the performance of the proposed device, we have compared its internal quantum efficiency (IQE), carrier concentration, energy band diagram, and radiative recombination rate with the conventional device structure. Furthermore, the influence of Al composition in the Al-graded p-AlGaN hole source layer (HSL) on the operating voltages of the proposed UVB LEDs was considered. The simulation results suggest that our proposed structure has a high peak efficiency and much lower efficiency droop as compared to the reference structure (conventional). Ultimately, the radiative recombination rate in the MQWs of the proposed UVB LED-N structure has increased up to ∼73%, which is attributed to the enhanced level of electron and hole concentrations by ∼64% and 13%, respectively, in the active region. Finally, a high efficiency droop of up to ∼42% in RLED has been successfully suppressed, to ∼7%, by using the optimized ud-AlGaN FQB and the p-MQB EBL, as well as introducing Al-graded p-AlGaN HSL in the proposed UVB LED-N structure.

Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate Performance Parameters of 275 nm AlGaN-based UV-C LED

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously

Suppressing the efficiency droop in AlGaN-based UVB LEDs

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs

Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

Progress in efficient doping of Al-rich AlGaN