Abstract:Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.. The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03357?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03357</a>.SEM measurement, long-time on/off cyclic photocurrent measurements, supplementary notes, and experimental details (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03357/suppl_file/nl0c03357_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlxGa1–xN Hetero-Epilayers

AlGaN MSM UV Photodetector

Metal–Semiconductor–Metal Ε-Ga2o3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Photocurrent Characteristics of Two-Dimensional-Electron-Gas-Based Algan/Gan Metal-Semiconductor-Metal Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Photoconductive and Photovoltaic Metal-Semiconductor-metal Κ-Ga2o3 Solar-Blind Detectors with High Rejection Ratios

Ga2O3 Metal–insulator-Semiconductor Solar-Blind Photodiodes with Plasmon-Enhanced Responsivity and Suppressed Internal Photoemission

High-Performance Β-Ga2o3 MISIM Solar-Blind Photodetectors with an Interfacial AlN Layer

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Nonpolar (112̅0) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon

Ultrahigh-Performance Solar-Blind Photodetector Based on $\alpha$ -Phase- Dominated Ga 2 O 3 Film with Record Low Dark Current of 81 Fa

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Thin Film Transistors and Metal–semiconductor–metal Photodetectors Based on GaN Thin Films Grown by Inductively Coupled Plasma Metal-Organic Chemical Vapor Deposition

A Study of Al0.3Ga0.7N Metal-semiconductor-metal UV Photodiodes