Abstract:A method to pattern‐grow high‐quality GaN thin films is introduced. The GaN photodetectors have excellent ultraviolet (UV) detection performance, include a high responsivity of 4.23 A/W and a respectable specific detectivity of 1.76 × 1012 Jones. Moreover, the photodetector arrays exhibit the strong homogeneity and repeatability, allowing it to function as a reliable UV image sensor with reasonable spatial resolution. GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN‐based ultraviolet (UV) photodetectors are the subject of in‐depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN‐based photodetectors array, large‐area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high‐quality GaN thin films for the assembly of an array of high‐performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo‐response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight/Idark ratio over 105, a high responsivity of 4.23 AW−1, and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.

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