Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet Photodetection

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy

The role of AlN thickness in MOCVD growth of N-polar GaN

Thin Film Transistors and Metal–semiconductor–metal Photodetectors Based on GaN Thin Films Grown by Inductively Coupled Plasma Metal-Organic Chemical Vapor Deposition

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Liquid‐Metal‐Assisted Synthesis of Patterned GaN Thin Films for High‐Performance UV Photodetectors Array

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

N-polar GaN Epitaxy and High Electron Mobility Transistors

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response