Abstract:Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decrease with the increase of irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low gain avalanche detector avoids crosstalk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise. Thus, the 4H-SiC particle detector, especially the low gain avalanche detector has the potential to detect the minimal ionized particles (MIPs) under extreme irradiation and high temperature environments. In this work, the emphasis was placed on the design of a 4H-SiC Low Gain Avalanche Detector (LGAD), especially the epitaxial structure and technical process which played the main roles. In addition, a simulation tool--RASER(RAdiation SEmiconductoR) was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed. The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 $\pm$ 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.

Research on the structure of ultrathin Si PIN detector

Fabrication and Characterization of Thin Silicon PIN Detectors

A research on thick PIN detector with high breakdown voltage

Analysis and Fabrication of A New Two Dimensional Near Infrared Pincushion Silicon Based Psd

Fabrication and Characterization of Two-Dimensional Pin-Cushion Position Sensitive Detectors

Fabrication and characterization of ultra-thin PIN detector

Fabrication of Thin Silicon PIN Detector Based on Wafer Bonding Technology

Fabrication Of Ultra-Thin Silicon Pin Detector

Test Analysis of Ion-Implanted PIN Radiation Detectors

Design and fabrication of large Ultra-thin PIN detector with membrane stress deviation

Study on Geometry of Silicon PIN Radiation Detector for Breakdown Voltage Improvement

Fabrication of Si Radiation Detector with Plane Technology

The PIN Detector Parallel Application

Design and simulation of a novel 4H-SiC LGAD timing device

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Time Resolution of the 4H-SiC PIN Detector

Transient Behaviour Analysis in Silicon Carbide Alpha Particle Detector Using TCAD and SRIM Simulation

Performance Improvement of 4H-Sic PIN Ultraviolet Avalanche Photodiodes with Different Intrinsic Layer Thicknesses

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

Bonding Processing and 3D Integration of High-Performance Silicon PIN Detector for ΔE-E telescope

Study on Small Dead Area High-Voltage Silicon Pin Detectors