Fabrication Of Ultra-Thin Silicon Pin Detector

Min Yu,Xianshan Dong,Ying Li,Dayu Tian,Jinyan Wang,Yufeng Jin

DOI: https://doi.org/10.1117/12.900555

2011-01-01

Abstract:Ultra-thin silicon PIN detectors are applied widely in nuclear physics experiments and space exploration. It is used in. E-E telescope system as the Delta E detector to detect the energy loss of high energy particles so that to identify the charge and mass of the particle. The Delta E detector is required to be very thin(<50 mu m) in order to let low energy particles to go through the Delta E detector and enter the followed E detector. The fabrication of ultra-thin silicon detector is very difficult and challenging due to the fragility of the ultra-thin silicon membrane considering that the area of the detector is required to as large as 10 similar to 100 mm(2). Several different technologies have been proposed to fabricate the ultra-thin silicon PIN detector, such as back side locally thinning of the high resistivity silicon wafer, application of the SOI technology or wafer thinning and bonding technology. The monolithic Delta E-E detector telescope technology has also been proposed. In this talk we review the development of ultra-thin silicon PIN detector technology including our research work.