Abstract:A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. This contribution presents recent results of a newly developed in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA). The ACA interconnect technology replaces solder bumps with conductive micro-particles embedded in an epoxy layer applied as either film or paste. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACA using a flip-chip device bonder. The ACA technology can also be used for ASIC-PCB/FPC integration, replacing wire bonding or large-pitch solder bumping techniques. A specific pixel-pad topology is required to enable the connection via micro-particles and create cavities into which excess epoxy can flow. This pixel-pad topology is achieved with an in-house Electroless Nickel Immersion Gold (ENIG) process. The ENIG and ACA processes are qualified with a variety of different ASICs, sensors, and dedicated interconnect test structures, with pad diameters ranging from 12 μm to 140 μm and pitches between 20 μm and 1.3 mm. The produced assemblies are characterized electrically, with radioactive-source exposures, and in tests with high-momentum particle beams. This contribution introduces the developed interconnect and plating processes and showcases different hybrid assemblies produced and tested with the above-mentioned methods. A focus is placed on recent optimization of the plating and interconnect processes, resulting in an improved plating uniformity and interconnect yield.

Fabrication of Integrated Silicon PIN Detector Based on Al-Sn-Al Bonding for ΔE-E Telescope Application

Bonding Processing and 3D Integration of High-Performance Silicon PIN Detector for ΔE-E telescope

Fabrication Of Ultra-Thin Silicon Pin Detector

Fabrication of Thin Silicon PIN Detector Based on Wafer Bonding Technology

Bonding of Aluminum Coated Silicon Wafers Based on Polypropylene Carbonate and As a Multi-Functional Sensor

Fabrication and characterization of ultra-thin PIN detector

Fabrication and Characterization of Thin Silicon PIN Detectors

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

Design and Analysis of Ingaas Pin Photodetectors Integrated on Silicon-On-Insulator Racetrack Resonators

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Fabrication of Si Radiation Detector with Plane Technology

Design and fabrication of large Ultra-thin PIN detector with membrane stress deviation

Research on the structure of ultrathin Si PIN detector

Investigations of Silicon Wafer Bonding Using Thin Al and Sn Films for Heterogeneous Integration

Investigation of Evanescent Coupling Between SOI Waveguides and Heterogeneously-Integrated III–V Pin Photodetectors

Pixel detector hybridisation with Anisotropic Conductive Films

Low Temperature Al Based Wafer Bonding Using Sn As Intermediate Layer

Integration of High-Performance InGaAs/GaN Photodetectors by Direct Bonding Via Micro-transfer Printing.

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films

Pixel detector hybridisation and integration with anisotropic conductive adhesives